By forming a heteroepticaxial layer of 3C-SiC on a Si substrate and by graphitizing the top surface of the film, we can fabricate epitaxial graphene on Si substrates. Surprisingly, graphene forms not only on 3C-SiC(111), which is crystallographically similar to 6H-SiC(0001), but also on 3C-SiC(110) and 3C-SiC(100) films. A sophisticated growth technique even allows us to form graphene on C-terminated 3C-SiC(-1-1-1) film. This variety of crystallographic orientations as well as the easiness to realize these structures are definitely one of the major advantages of our graphene-on-silicon, or GOS, technology, and will enable us to enjoy several electronic properties of graphene on a single chip. Host: Junichiro Kono